1n4727...1n4761 silicon planar power zener diodes for use in stabilizing and clipping circuits with high power rating. standard zener voltage tolerance is 10%. add suffix "a" for 5% tolerance and suffix "b" for 2% tolerance. other tolerances are available upon request. absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 1 1) w junction temperature t j 200 o c storage temperature range t stg - 65 to + 200 o c 1) valid provided that leads at a distance of 8 mm from case ar e kept at ambient temperature. characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 170 1) k/w forward voltage at i f = 200 ma v f 1.2 v 1) valid provided that leads at a distance of 8 mm from case ar e kept at ambient temperature. max. 4.2 max. 2.8 glass case do-41 max. 0.7 min. 25.4 min. 25.4 xxx cathode band part no. st "st" brand dimensions in mm black black black 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
characteristics at t a = 25 o c type zener voltage 3) dynamic resistance 1) reverse current maximum surge current 4) maximum regulator current 2) v znom at l zt z zt z zk at i zk i r at v r at t a = 25 o c (v) (ma) max. ( ? ) max. ( ? ) (ma) max. (a) (v) i zsm (ma) i zm (ma) 1n4727 3 83 10 400 1 150 1 1375 275 1n4728 3.3 76 10 400 1 150 1 1375 275 1n4729 3.6 69 10 400 1 100 1 1260 252 1n4730 3.9 64 9 400 1 100 1 1190 234 1n4731 4.3 58 9 400 1 50 1 1070 217 1n4732 4.7 53 8 500 1 10 1 970 193 1n4733 5.1 49 7 550 1 10 1 890 178 1n4734 5.6 45 5 600 1 10 2 810 162 1n4735 6.2 41 2 700 1 10 3 730 146 1n4736 6.8 37 3.5 700 1 10 4 660 133 1n4737 7.5 34 4 700 0.5 10 5 605 121 1n4738 8.2 31 4.5 700 0.5 10 6 550 110 1n4739 9.1 28 5 700 0.5 10 7 500 100 1n4740 10 25 7 700 0.25 10 7.6 454 91 1n4741 11 23 8 700 0.25 5 8.4 414 83 1n4742 12 21 9 700 0.25 5 9.1 380 76 1n4743 13 19 10 700 0.25 5 9.9 344 69 1n4744 15 17 14 700 0.25 5 11.4 304 61 1n4745 16 15.5 16 700 0.25 5 12.2 285 57 1n4746 18 14 20 750 0.25 5 13.7 250 50 1N4747 20 12.5 22 750 0.25 5 15.2 225 45 1n4748 22 11.5 23 750 0.25 5 16.7 205 41 1n4749 24 10.5 25 750 0.25 5 18.2 190 38 1n4750 27 9.5 35 750 0.25 5 20.6 170 34 1n4751 30 8.5 40 1000 0.25 5 22.8 150 30 1n4752 33 7.5 45 1000 0.25 5 25.1 135 27 1n4753 36 7 50 1000 0.25 5 27.4 125 25 1n4754 39 6.5 60 1000 0.25 5 29.7 115 23 1n4755 43 6 70 1500 0.25 5 32.7 110 22 1n4756 47 5.5 80 1500 0.25 5 35.8 95 19 1n4757 51 5 95 1500 0.25 5 38.8 90 18 1n4758 56 4.5 110 2000 0.25 5 42.6 80 16 1n4759 62 4 125 2000 0.25 5 47.1 70 14 1n4760 68 3.7 150 2000 0.25 5 51.7 65 13 1n4761 75 3.3 175 2000 0.25 5 56 60 12 1) the dynamic resistance is derived from the 60 hz ac voltage whic h results when an ac current having an rms value equal to 10% o f the zener current (i zt or i zk ) is superimposed on i zt or i zk . dynamic resistance is measured at tw o points to insure a sharp knee on the breakdown curve and to eliminate unstable units. 2) valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 3) tested with pulses tp = 20 ms. 4) the rating listed in the electrical charac teristics table is maximum peak, non-repetitiv e, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current i zt . 1n4727...1n4761 silicon planar power zener diodes 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
i n 4 7 5 8 i n 4 7 4 4 i n 4 7 4 3 0 0 10 10 ma iz 20 30 40 50 i n 4 7 4 2 20 30 40 50 i n 4 7 5 3 i n 4 7 5 1 i n 4 7 5 0 i n 4 7 5 2 i n 4 7 4 9 i n 4 7 4 8 i n 4 7 4 7 i n 4 7 4 5 i n 4 7 4 6 i n 4 7 5 5 i n 4 7 5 4 i n 4 7 5 7 i n 4 7 5 6 breakdowm characteristics t j =constant(pulsed) 10 0 0 1 30 20 50 40 iz 100 70 60 90 80 ma 2345 i n 4 7 2 8 i n 4 7 2 7 i n 4 7 3 1 i n 4 7 2 9 i n 4 7 3 0 i n 4 7 3 2 i n 4 7 3 3 i n 4 7 6 3 i n 4 7 6 2 i n 4 7 6 1 i n 4 7 6 0 i n 4 7 5 9 vz 60 70 80 90 i n 4 7 6 4 100 110 120 in... t j =25 c o i n 4 7 4 0 vz 67 i n 4 7 3 6 i n 4 7 3 7 89 i n 4 7 3 8 i n 4 7 3 9 i n 4 7 3 5 i n 4 7 3 4 10 11 i n 4 7 4 1 12 in... t j =25 c o 1n4727...1n4761 silicon planar power zener diodes 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
r ja thermal resistance junction to ambient (c/w) i, lead length (mm) fig. 2 typical thermal resistance vs. lead length 0 05 1015 50 100 150 30 20 25 200 250 100 0 0 0.2 0.4 0.8 0.6 1.0 2 00 t a , ambient temperature fig. 1 power dissipation vs ambient temperature p d . total power dissipation (w) v r =30v v r =20v v r =5v v r =2v v r =0v f=1mhz t a =25c 50 vz, zener voltage (v) fig. 3 junction capacitance vs zener voltage c j , diode capacitance (pf) 100 1 010203040 10 1000 differential zener impedance ( ) 100 2ma vz, zener voltage (v) fig. 4 typical zener impedance vs. zener voltage 60 1 1 10ma 20ma 10 5ma 10 100 iz=1ma 1000 1n4727...1n4761 silicon planar power zener diodes 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
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